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Effect of carrier transfer on the PL intensity in self-assembled In(Ga)As/GaAs quantum rings
We present results concerning the carrier transfer between In(Ga)As quantum rings in a stacked multilayer structure, which is characterised by a bimodal size distribution. This transfer of carriers explains the observed temperature behaviour of diode lasers based on that kind of stacked layer structures. The inter-ring carrier transfer can be possible by phonon assisted tunnelling from the ground state of the smallring family towards the big-ring family of the bimodal size distribution. This process is thermally activated in the range 40–80 K.
W. Ouerghui, J. Martinez-Pastor, J. Gomis, A. Melliti, M.A. Maaref, D. Granados, J.M. Garcia
Effect of carrier transfer on the PL intensity in self-assembled In(Ga)As/GaAs quantum rings
We present results concerning the carrier transfer between In(Ga)As quantum rings in a stacked multilayer structure, which is characterised by a bimodal size distribution. This transfer of carriers explains the observed temperature behaviour of diode lasers based on that kind of stacked layer structures. The inter-ring carrier transfer can be possible by phonon assisted tunnelling from the ground state of the smallring family towards the big-ring family of the bimodal size distribution. This process is thermally activated in the range 40–80 K.
W. Ouerghui, J. Martinez-Pastor, J. Gomis, A. Melliti, M.A. Maaref, D. Granados, J.M. Garcia
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